FDTD simulation on laser-induced enhancement of electric field in the near-field apertureless probe system

被引：3
作者：
Liu, J. C. [1 ]
Liu, D. M. [1 ]
Shao, T. M. [1 ]
机构：
[1] Tsinghua Univ, State Key Lab Tribol, Beijing 100084, Peoples R China
来源：
LASER PHYSICS LETTERS | 2012年 / 9卷 / 07期
基金：
中国国家自然科学基金;
关键词：
FDTD simulation; laser-induced enhancement; intensity of electric field; near-field;
D O I：
10.7452/lapl.201210012
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Laser processing has gained wide-spread use in cutting and drilling at micro scales. However, it is difficult for laser processing to make breakthrough of optical diffraction limit. In this article, a method of surface micro-processing based on laser-induced electric field enhancement in the near-field apertureless probe system is introduced. The enhancement was simulated by using a Finite Difference Time Domain-algorithm-based model. Characters of probe materials, probe geometric characters, laser incident angle and distances between the probe and the substrate were studied in order to understand mechanism of the enhancement. A strong correlation between the intensity and the working parameters was observed, which paves the way to optimize experimental conditions and parameters in the manufacturing process. Due to the strongly-enhanced electric field in laser processing, micrometer and nanometer scale processing can be reached. [GRAPHICS] (C) 2012 by Astro, Ltd.
引用
收藏
页码：511 / 518
页数：8
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