Ti-Alloying of BaZrS3 Chalcogenide Perovskite for Photovoltaics

被引：72

作者：

Wei, Xiucheng ^{[1
]}

Hui, Haolei ^{[1
]}

Perera, Samanthe ^{[1
]}

Sheng, Aaron ^{[2
]}

Watson, David F. ^{[2
]}

Sun, Yi-Yang ^{[3
]}

Jia, Quanxi ^{[4
]}

Zhang, Shengbai ^{[5
]}

Zeng, Hao ^{[1
]}

机构：

[1] SUNY Buffalo, Dept Phys, Buffalo, NY 14260 USA

[2] SUNY Buffalo, Dept Chem, Buffalo, NY 14260 USA

[3] Chinese Acad Sci, State Key Lab High Performance Ceram & Superfine, Shanghai Inst Ceram, Shanghai 201899, Peoples R China

[4] SUNY Buffalo, Dept Mat Design & Innovat, Buffalo, NY 14260 USA

[5] Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA

来源：

ACS OMEGA | 2020年 / 5卷 / 30期

关键词：

SOLAR-CELLS; SULFIDES; LENGTHS;

D O I：

10.1021/acsomega.0c00740

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

BaZrS3, a prototypical chalcogenide perovskite, has been shown to possess a direct band gap, an exceptionally strong near band edge light absorption, and good carrier transport. Coupled with its great stability, nontoxicity with earth-abundant elements, it is thus a promising candidate for thin film solar cells. However, its reported band gap in the range of 1.7-1.8 eV is larger than the optimal value required to reach the Shockley-Queisser limit of a single-junction solar cell. Here, we report the synthesis of Ba(Zr1-xTix)S-3 perovskite compounds with a reduced band gap. It is found that Ti-alloying is extremely effective in band gap reduction of BaZrS3: a mere 4 atom % alloying decreases the band gap from 1.78 to 1.51 eV, resulting in a theoretical maximum power conversion efficiency of 32%. Higher Ti-alloying concentration is found to destabilize the distorted chalcogenide perovskite phase.

引用

页码：18579 / 18583

页数：5