III-V/Ge High Mobility Channel Integration of InGaAs n-Channel and Ge p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Self-Aligned Ni-Based Metal Source/Drain Using Direct Wafer Bonding

被引：31

作者：

Yokoyama, Masafumi ^{[1
]}

Kim, Sanghyeon ^{[1
]}

Zhang, Rui ^{[1
]}

Taoka, Noriyuki ^{[1
]}

Urabe, Yuji ^{[2
]}

Maeda, Tatsuro ^{[2
]}

Takagi, Hideki ^{[2
]}

Yasuda, Tetsuji ^{[2
]}

Yamada, Hisashi ^{[3
]}

Ichikawa, Osamu ^{[3
]}

Fukuhara, Noboru ^{[3
]}

Hata, Masahiko ^{[3
]}

Sugiyama, Masakazu ^{[1
]}

Nakano, Yoshiaki ^{[1
]}

Takenaka, Mitsuru ^{[1
]}

Takagi, Shinichi ^{[1
]}

机构：

[1] Univ Tokyo, Dept Elect Engn & Informat Syst, Bunkyo Ku, Tokyo 1138656, Japan

[2] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan

[3] Sumitomo Chem Co Ltd, Tsukuba, Ibaraki 3003294, Japan

来源：

APPLIED PHYSICS EXPRESS | 2012年 / 5卷 / 07期

关键词：

MOSFETS;

D O I：

10.1143/APEX.5.076501

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrated the integration of high-mobility channel InGaAs n-channel and Ge p-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs and pMOSFETs) with self-aligned Ni-InGaAs and Ni-Ge metal source/drain (S/D) on a Ge substrate by direct wafer bonding (DWB). Ni-based metal S/D and Al2O3-based gate stacks have realized the fabrication of high-electron-mobility InGaAs-on-insulator (InGaAs-OI) nMOSFETs and high-hole-mobility Ge pMOSFETs at the same time. The InGaAs-OI nMOSFETs and Ge pMOSFETs exhibited high electron and hole mobilities of 1800 and 260 cm(2) V-1 s(-1) and mobility enhancements against Si of 3.5x and 2.3x, respectively. (C) 2012 The Japan Society of Applied Physics

引用

页数：3

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