Electric field control of thermal stability and magnetization switching in (Ga,Mn) As

被引：19
作者：
Chiba, D. [1 ,2 ,3 ]
Ono, T. [1 ]
Matsukura, F. [4 ,5 ,6 ]
Ohno, H. [4 ,5 ,6 ]
机构：
[1] Kyoto Univ, Inst Chem Res, Uji, Kyoto 611001, Japan
[2] Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama 3320012, Japan
[3] Univ Tokyo, Dept Appl Phys, Fac Engn, Bunkyo Ku, Tokyo 1338656, Japan
[4] Tohoku Univ, WPI Adv Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan
[5] Tohoku Univ, Ctr Spintron Intergraded Syst, Aoba Ku, Sendai, Miyagi 9808577, Japan
[6] Tohoku Univ, Elect Commun Res Inst, Lab Nanoelect & Spintron, Aoba Ku, Sendai, Miyagi 9808577, Japan
来源：
APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 14期
关键词：
ATOMIC LAYERS; FERROMAGNETISM; SEMICONDUCTOR; MANIPULATION; ANISOTROPY;
D O I：
10.1063/1.4821778
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Magnetization switching induced by electric fields in the absence of external magnetic field has been demonstrated in a field effect structure with a (Ga,Mn) As layer having an in-plane magnetic anisotropy. The switching is related to the modulation of the in-plane magnetic anisotropy by electric fields. Reducing magnetic anisotropy energy height by electric fields, we observe stochastic magnetization switching. (C) 2013 AIP Publishing LLC.
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页数：4
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