Impact of Spin-Transfer Torque on the Write-Error Rate of a Voltage-Torque-Based Magnetoresistive Random-Access Memory

The impact of spin-transfer torque (STT) on the write-error rate of a voltage-torque-based magnetoresistive random-access memory is theoretically analyzed by use of the macrospin model. During the voltage pulse the STT assists or suppresses the precessional motion of the magnetization depending on the initial magnetization direction. The characteristic value of the current density is derived by our balancing the STT and the external-field torque, which is about 5 x 10(11) A/m(2). The results show that the write-error rate is insensitive to the STT below a current density of 10(10) A/m(2).