Local Mn structure and room temperature ferromagnetism in Mn-doped In2O3 films

被引：54

作者：

An, Yukai ^{[1
]}

Wang, Shiqi ^{[1
]}

Duan, Lingshen ^{[1
]}

Liu, Jiwen ^{[1
]}

Wu, Zhonghua ^{[2
]}

机构：

[1] Tianjin Univ Technol, Sch Mat Sci & Engn, Tianjin Key Lab Photoelect Mat & Devices, Tianjin 300384, Peoples R China

[2] Chinese Acad Sci, Inst High Energy Phys, BSRF, Beijing 100049, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 21期

基金：

中国国家自然科学基金;

关键词：

INDIUM-TIN OXIDE; THIN-FILMS; FE; CO; (IN1-XFEX)(2)O3-SIGMA; SEMICONDUCTORS; SNO2;

D O I：

10.1063/1.4808116

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Local Mn structure, magnetic, and transport properties in Mn-doped In2O3 films were investigated systematically. The detailed structural analysis and multiple-scattering calculations reveal that Mn2+ ions substitute for In3+ sites of the In2O3 lattice and form Mn-In(2+) + VO complex with the O vacancy in the nearest coordination shell. All films show clear room temperature ferromagnetism and Mott variable range hopping transport behavior. The saturation magnetization of films increases first, and then decreases with Mn doping, while carrier concentration n(c) decreases monotonically, implying that the ferromagnetism is not mediated by the charge carriers. These results provide strong evidence that oxygen vacancies play an important role in activating the ferromagnetic interactions in Mn-doped In2O3 films. (C) 2013 AIP Publishing LLC.

引用

页数：5

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