Vacancy compensation and related donor-acceptor pair recombination in bulk AlN

被引：84

作者：

Gaddy, Benjamin E. ^{[1
]}

Bryan, Zachary ^{[1
]}

Bryan, Isaac ^{[1
]}

Kirste, Ronny ^{[1
]}

Xie, Jinqiao ^{[2
]}

Dalmau, Rafael ^{[2
]}

Moody, Baxter ^{[2
]}

Kumagai, Yoshinao ^{[3
]}

Nagashima, Toru ^{[4
]}

Kubota, Yuki ^{[4
]}

Kinoshita, Toru ^{[4
]}

Koukitu, Akinori ^{[3
]}

Sitar, Zlatko ^{[1
]}

Collazo, Ramon ^{[1
]}

Irving, Douglas L. ^{[1
]}

机构：

[1] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

[2] HexaTech Inc, Morrisville, NC 27560 USA

[3] Tokyo Univ Agr & Technol, Dept Appl Chem, Koganei, Tokyo 1848588, Japan

[4] Tokuyama Corp, Tsukuba Res Labs, Tsukuba, Ibaraki 3004247, Japan

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 16期

关键词：

INITIO MOLECULAR-DYNAMICS; TOTAL-ENERGY CALCULATIONS; SEEDED GROWTH; SEMICONDUCTORS; CRYSTALS; DEFECT;

D O I：

10.1063/1.4824731

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A prominent 2.8 eV emission peak is identified in bulk AlN substrates grown by physical vapor transport. This peak is shown to be related to the carbon concentration in the samples. Density functional theory calculations predict that this emission is caused by a donor-acceptor pair (DAP) recombination between substitutional carbon on the nitrogen site and a nitrogen vacancy. Photoluminescence and photoluminescence-excitation spectroscopy are used to confirm the model and indicate the DAP character of the emission. The interaction between defects provides a pathway to creating ultraviolet-transparent AlN substrates for optoelectronics applications. (C) 2013 AIP Publishing LLC.

引用

页数：5

共 27 条

[1] Characterization of bulk AlN with low oxygen content [J].

Bickermann, M ;

Epelbaum, BM ;

Winnacker, A .

JOURNAL OF CRYSTAL GROWTH, 2004, 269 (2-4) :432-442

[2] PVT growth of bulk AlN crystals with low oxygen contamination [J].

Bickermann, M ;

Epelbamn, BM ;

Winnacker, A .

5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, 2003, 0 (07) :1993-1996

[3] On the origin of the 265 nm absorption band in AlN bulk crystals [J].

Collazo, Ramon ;

Xie, Jinqiao ;

Gaddy, Benjamin E. ;

Bryan, Zachary ;

Kirste, Ronny ;

Hoffmann, Marc ;

Dalmau, Rafael ;

Moody, Baxter ;

Kumagai, Yoshinao ;

Nagashima, Toru ;

Kubota, Yuki ;

Kinoshita, Toru ;

Koukitu, Akinori ;

Irving, Douglas L. ;

Sitar, Zlatko .

APPLIED PHYSICS LETTERS, 2012, 100 (19)

[4] High Output Power from 260nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Improved Thermal Performance [J].

Grandusky, James R. ;

Gibb, Shawn R. ;

Mendrick, Mark C. ;

Moe, Craig ;

Wraback, Michael ;

Schowalter, Leo J. .

APPLIED PHYSICS EXPRESS, 2011, 4 (08)

[5] Preparation of Bulk AlN Seeds by Spontaneous Nucleation of Freestanding Crystals [J].

Hartmann, Carsten ;

Wollweber, Juergen ;

Dittmar, Andrea ;

Irmscher, Klaus ;

Kwasniewski, Albert ;

Langhans, Frank ;

Neugut, Tom ;

Bickermann, Matthias .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (08)

[6] Growth of AlN single crystalline boules [J].

Herro, Z. G. ;

Zhuang, D. ;

Schlesser, R. ;

Sitar, Z. .

JOURNAL OF CRYSTAL GROWTH, 2010, 312 (18) :2519-2521

[7] Seeded growth of AlN on N- and Al-polar ⟨0 0 0 1⟩ AlN seeds by physical vapor transport [J].

Herro, ZG ;

Zhuang, D ;

Schlesser, R ;

Collazo, R ;

Sitar, Z .

JOURNAL OF CRYSTAL GROWTH, 2006, 286 (02) :205-208

[8]

Heyd J, 2006, J CHEM PHYS, V124, DOI [10.1063/1.2204597, 10.1063/1.1564060]

[9] THEORY OF RELATIVE NATIVE-DEFECT AND IMPURITY-DEFECT ABUNDANCES IN COMPOUND SEMICONDUCTORS AND THE FACTORS THAT INFLUENCE THEM [J].

JANSEN, RW ;

SANKEY, OF .

PHYSICAL REVIEW B, 1989, 39 (05) :3192-3206

[10] Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy [J].

Kinoshita, Toru ;

Hironaka, Keiichiro ;

Obata, Toshiyuki ;

Nagashima, Toru ;

Dalmau, Rafael ;

Schlesser, Raoul ;

Moody, Baxter ;

Xie, Jinqiao ;

Inoue, Shin-ichiro ;

Kumagai, Yoshinao ;

Koukitu, Akinori ;

Sitar, Zlatko .

APPLIED PHYSICS EXPRESS, 2012, 5 (12)

← 1 2 3 →