Creation of helical Dirac fermions by interfacing two gapped systems of ordinary fermions

被引：82

作者：

Wang, Z. F. ^{[1
]}

Yao, Meng-Yu ^{[2
]}

Ming, Wenmei ^{[1
]}

Miao, Lin ^{[2
]}

Zhu, Fengfeng ^{[2
]}

Liu, Canhua ^{[2
]}

Gao, C. L. ^{[2
]}

Qian, Dong ^{[2
]}

Jia, Jin-Feng ^{[2
]}

Liu, Feng ^{[1
]}

机构：

[1] Univ Utah, Dept Mat Sci & Engn, Salt Lake City, UT 84112 USA

[2] Shanghai Jiao Tong Univ, Dept Phys, Key Lab Artificial Struct & Quantum Control, Minist Educ, Shanghai 200240, Peoples R China

来源：

NATURE COMMUNICATIONS | 2013年 / 4卷

关键词：

3-DIMENSIONAL TOPOLOGICAL INSULATOR; BI2SE3; CONE;

D O I：

10.1038/ncomms2387

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Topological insulators are a unique class of materials characterized by a Dirac cone state of helical Dirac fermions in the middle of a bulk gap. When the thickness of a three-dimensional topological insulator is reduced, however, the interaction between opposing surface states opens a gap that removes the helical Dirac cone, converting the material back to a normal system of ordinary fermions. Here we demonstrate, using density function theory calculations and experiments, that it is possible to create helical Dirac fermion state by interfacing two gapped films-a single bilayer Bi grown on a single quintuple layer Bi2Se3 or Bi2Te3. These extrinsic helical Dirac fermions emerge in predominantly Bi bilayer states, which are created by a giant Rashba effect with a coupling constant of similar to 4eV . angstrom due to interfacial charge transfer. Our results suggest that this approach is a promising means to engineer topological insulator states on non-metallic surfaces.

引用

页数：6

共 33 条

[1] Electrically Detected Interferometry of Majorana Fermions in a Topological Insulator [J].

Akhmerov, A. R. ;

Nilsson, Johan ;

Beenakker, C. W. J. .

PHYSICAL REVIEW LETTERS, 2009, 102 (21)

[2] Giant spin splitting through surface alloying [J].

Ast, Christian R. ;

Henk, Juergen ;

Ernst, Arthur ;

Moreschini, Luca ;

Falub, Mihaela C. ;

Pacile, Daniela ;

Bruno, Patrick ;

Kern, Klaus ;

Grioni, Marco .

PHYSICAL REVIEW LETTERS, 2007, 98 (18)

[3] Reactive Chemical Doping of the Bi2Se3 Topological Insulator [J].

Benia, Hadj M. ;

Lin, Chengtian ;

Kern, Klaus ;

Ast, Christian R. .

PHYSICAL REVIEW LETTERS, 2011, 107 (17)

[4] Quantum spin Hall effect and topological phase transition in HgTe quantum wells [J].

Bernevig, B. Andrei ;

Hughes, Taylor L. ;

Zhang, Shou-Cheng .

SCIENCE, 2006, 314 (5806) :1757-1761

[5] Quantum spin hall effect [J].

Bernevig, BA ;

Zhang, SC .

PHYSICAL REVIEW LETTERS, 2006, 96 (10)

[6] Experimental Realization of a Three-Dimensional Topological Insulator, Bi2Te3 [J].

Chen, Y. L. ;

Analytis, J. G. ;

Chu, J. -H. ;

Liu, Z. K. ;

Mo, S. -K. ;

Qi, X. L. ;

Zhang, H. J. ;

Lu, D. H. ;

Dai, X. ;

Fang, Z. ;

Zhang, S. C. ;

Fisher, I. R. ;

Hussain, Z. ;

Shen, Z. -X. .

SCIENCE, 2009, 325 (5937) :178-181

[7] Topological insulators in three dimensions [J].

Fu, Liang ;

Kane, C. L. ;

Mele, E. J. .

PHYSICAL REVIEW LETTERS, 2007, 98 (10)

[8] Topological insulators with inversion symmetry [J].

Fu, Liang ;

Kane, C. L. .

PHYSICAL REVIEW B, 2007, 76 (04)

[9] Silicon Surface with Giant Spin Splitting [J].

Gierz, I. ;

Suzuki, T. ;

Frantzeskakis, E. ;

Pons, S. ;

Ostanin, S. ;

Ernst, A. ;

Henk, J. ;

Grioni, M. ;

Kern, K. ;

Ast, C. R. .

PHYSICAL REVIEW LETTERS, 2009, 103 (04)

[10] Colloquium: Topological insulators [J].

Hasan, M. Z. ;

Kane, C. L. .

REVIEWS OF MODERN PHYSICS, 2010, 82 (04) :3045-3067

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