Critical assessment of charge mobility extraction in FETs

被引：617
作者：
Choi, Hyun Ho [1 ,2 ]
Cho, Kilwon [2 ]
Frisbie, C. Daniel [3 ]
Sirringhaus, Henning [4 ]
Podzorov, Vitaly [1 ]
机构：
[1] Rutgers State Univ, Dept Phys, 136 Frelinghuysen Rd, Piscataway, NJ 08854 USA
[2] Pohang Univ Sci & Technol POSTECH, Dept Chem Engn, Pohang 37673, South Korea
[3] Univ Minnesota, Dept Chem Engn & Mat Sci, 421 Washington Ave SE, Minneapolis, MN 55455 USA
[4] Univ Cambridge, Cavendish Lab, JJ Thomson Ave, Cambridge CB3 0HE, England
来源：
NATURE MATERIALS | 2018年 / 17卷 / 01期
关键词：
FIELD-EFFECT TRANSISTORS; SINGLE-CRYSTALS; TRANSPORT-PROPERTIES; HALL; SURFACE; POLYMER; VACUUM;
D O I：
10.1038/nmat5035
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Mobility is an important charge-transport parameter in organic, inorganic and hybrid semiconductors. We outline some of the common pitfalls of mobility extraction from field-effect transistor (FET) measurements and propose practical recommendations to avoid reporting erroneous mobilities in publications.
引用
收藏
页码：2 / 7
页数：6
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