Silicon gap-loaded microstrip slit-tetragonal resonator under IR-irradiation

被引：12

作者：

Zouganelis, G.

Budimir, D.

机构：

[1] Nagoya Inst Technol, Dept Mat Sci & Engn, Showa Ku, Nagoya, Aichi 4668555, Japan

[2] Univ Westminster, Dept Elect Syst & Software Engn, London W1W 6UW, England

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2007年 / 49卷 / 03期

关键词：

microstrip resonators; metamaterials; optical switch; slit-ring resonators; antennas;

D O I：

10.1002/mop.22240

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A microstrip slit-tetragonal resonator gap-loaded with a piece of silicon is proposed as optical tuning element. Change of photoconductivity of silicon, after irradiation of it with an infrared lamp, results a significant change of density (similar to 25 dB) of the first resonant peak (n = 1/2) of resonator. This behavior makes this device a possible candidate for optical tuning of microwave transmission lines at specific operating frequency. Measured S-parameters of the proposed device are in good agreement with simulated ones found front finite difference time domain method. Calculation of S-parameters based on a transmission line model is included for comparison. (c) 2007 Wiley Periodicals, Inc.

引用

页码：699 / 702

页数：4

共 10 条

[1] Toward a simulation of an optically controlled microwave microstrip line at 10 GHz [J].