Nanoscale characterization and local piezoelectric properties of lead-free KNN-LT-LS thin films

被引:32
作者
Abazari, M. [1 ]
Choi, T. [2 ]
Cheong, S-W [2 ]
Safari, A. [1 ]
机构
[1] Rutgers State Univ, Dept Mat Sci & Engn, Glenn Howatt Electroceram Labs, Piscataway, NJ 08854 USA
[2] Rutgers State Univ, Dept Phys & Astron, Rutgers Ctr Emergent Mat, Piscataway, NJ 08854 USA
关键词
MGO;
D O I
10.1088/0022-3727/43/2/025405
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report the observation of domain structure and piezoelectric properties of pure and Mn-doped (K-0.44,Na-0.52,Li-0.04)(Nb-0.84,Ta-0.1,Sb-0.06)O-3 (KNN-LT-LS) thin films on SrTiO3 substrates. It is revealed that, using piezoresponse force microscopy, ferroelectric domain structure in such 500 nm thin films comprised of primarily 180 degrees domains. This was in accordance with the tetragonal structure of the films, confirmed by relative permittivity measurements and x-ray diffraction patterns. Effective piezoelectric coefficient (d(33)) of the films were calculated using piezoelectric displacement curves and shown to be similar to 53 pm V-1 for pure KNN-LT-LS thin films. This value is among the highest values reported for an epitaxial lead-free thin film and shows a great potential for KNN-LT-LS to serve as an alternative to PZT thin films in future applications.
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页数:5
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共 20 条
  • [1] Effect of manganese doping on remnant polarization and leakage current in (K0.44,Na0.52,Li0.04)(Nb0.84,Ta0.10,Sb0.06)O3 epitaxial thin films on SrTiO3
    Abazari, M.
    Akdogan, E. K.
    Safaria, A.
    [J]. APPLIED PHYSICS LETTERS, 2008, 92 (21)
  • [2] Effects of doping on ferroelectric properties and leakage current behavior of KNN-LT-LS thin films on SrTiO3 substrate
    Abazari, M.
    Safari, A.
    [J]. JOURNAL OF APPLIED PHYSICS, 2009, 105 (09)
  • [3] Origin of high piezoelectric activity in ferroelectric (K0.44Na0.52Li0.04)-(Nb0.84Ta0.1Sb0.06)O3 ceramics
    Akdogan, E. K.
    Kerman, K.
    Abazari, M.
    Safari, A.
    [J]. APPLIED PHYSICS LETTERS, 2008, 92 (11)
  • [4] Cho CR, 1999, APPL PHYS LETT, V75, P268, DOI 10.1063/1.124344
  • [5] SUBSTRATE EFFECTS ON THE STRUCTURE OF EPITAXIAL PBTIO3 THIN-FILMS PREPARED ON MGO, LAALO3, AND SRTIO3 BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    FOSTER, CM
    LI, Z
    BUCKETT, M
    MILLER, D
    BALDO, PM
    REHN, LE
    BAI, GR
    GUO, D
    YOU, H
    MERKLE, KL
    [J]. JOURNAL OF APPLIED PHYSICS, 1995, 78 (04) : 2607 - 2622
  • [6] Characterization and control of domain structure in SrBi2Ta2O9 thin films by scanning force microscopy
    Gruverman, A
    Ikeda, Y
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (8A): : L939 - L941
  • [7] Hong SB, 2004, NANOSCALE PHENOMENA IN FERROELECTRIC THIN FILMS, P111
  • [8] Fatigue of piezoelectric properties in Pb(Zr,Ti)O-3 films
    Kholkin, AL
    Colla, EL
    Tagantsev, AK
    Taylor, DV
    Setter, N
    [J]. APPLIED PHYSICS LETTERS, 1996, 68 (18) : 2577 - 2579
  • [9] Ferroelectric and piezoelectric properties of Na0.52K0.48NbO3 thin films prepared by radio frequency magnetron sputtering
    Lee, Hai Joon
    Kim, Ill Won
    Kim, Jin Soo
    Ahn, Chang Won
    Park, Bae Ho
    [J]. APPLIED PHYSICS LETTERS, 2009, 94 (09)
  • [10] PZT thin films for microsensors and actuators: Where do we stand?
    Muralt, P
    [J]. IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL, 2000, 47 (04) : 903 - 915