Characterizations of nonlinear optical properties on GaN crystals in polar, nonpolar, and semipolar orientations

被引:26
作者
Chen, Hong [1 ]
Huang, Xuanqi [1 ]
Fu, Houqiang [1 ]
Lu, Zhijian [1 ]
Zhang, Xiaodong [1 ]
Montes, Jossue A. [1 ]
Zhao, Yuji [1 ]
机构
[1] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85287 USA
关键词
FREQUENCY COMB GENERATION; 2-PHOTON ABSORPTION; PLATFORM;
D O I
10.1063/1.4983026
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report the basic nonlinear optical properties, namely, two-photon absorption coefficient (beta), three-photon absorption coefficient (gamma), and Kerr nonlinear refractive index (n(kerr)), of GaN crystals in polar c-plane, nonpolar m-plane, and semipolar (2021) plane orientations. A typical Z-scan technique was used for the measurement with a femtosecond Ti:S laser from wavelengths of 724 nm to 840 nm. For the two-photon absorption coefficient (beta), similar values were obtained for polar, nonpolar, and semipolar samples, which are characterized to be similar to 0.90 cm/GW at 724nm and similar to 0.65 cm/GW at 730 nm for all the three samples. For the Kerr nonlinear refractive index (n(kerr)), self-focusing features were observed in this work, which is different from previous reports where self-defocusing features were observed on GaN in the visible and near-UV spectral regions. At 724 nm, nkerr was measured to be similar to 2.5 0 x 10 (-14) cm(2)/W for all three samples. Three-photon absorption coefficients (gamma) were also determined, which were found to be consistent with previous reports. This study provides valuable information on the basic nonlinear optical properties of III-nitride semiconductors, which are vital for a wide range of applications such as integrated photonics and quantum photonics.
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页数:4
相关论文
共 30 条
[1]  
Chen H., 2016, OPT EXPRESS, V24, P856
[2]   Optical nonlinearities and ultrafast all-optical switching of m-plane GaN in the near-infrared [J].
Fang, Yu ;
Xiao, Zhengguo ;
Wu, Xingzhi ;
Zhou, Feng ;
Yang, Junyi ;
Yang, Yong ;
Song, Yinglin .
APPLIED PHYSICS LETTERS, 2015, 106 (25)
[3]   Anisotropy of two-photon absorption and free-carrier effect in nonpolar GaN [J].
Fang, Yu ;
Zhou, Feng ;
Yang, Junyi ;
Wu, Xingzhi ;
Xiao, Zhengguo ;
Li, Zhongguo ;
Song, Yinglin .
APPLIED PHYSICS LETTERS, 2015, 106 (13)
[4]   Theoretical analysis of modulation doping effects on intersubband transition properties of semipolar AlGaN/GaN quantum well [J].
Fu, Houqiang ;
Chen, Hong ;
Huang, Xuanqi ;
Lu, Zhijian ;
Zhao, Yuji .
JOURNAL OF APPLIED PHYSICS, 2017, 121 (01)
[5]   Study of Low-Efficiency Droop in Semipolar (20(2)over-bar(1)over-bar) InGaN Light-Emitting Diodes by Time-Resolved Photoluminescence [J].
Fu, Houqiang ;
Lu, Zhijian ;
Zhao, Xin-Hao ;
Zhang, Yong-Hang ;
DenBaars, Steven P. ;
Nakamura, Shuji ;
Zhao, Yuji .
JOURNAL OF DISPLAY TECHNOLOGY, 2016, 12 (07) :736-741
[6]   Crystal orientation dependent intersubband transition in semipolar AlGaN/GaN single quantum well for optoelectronic applications [J].
Fu, Houqiang ;
Lu, Zhijian ;
Huang, Xuanqi ;
Chen, Hong ;
Zhao, Yuji .
JOURNAL OF APPLIED PHYSICS, 2016, 119 (17)
[7]   Blue, green, and amber InGaN/GaN light-emitting diodes on semipolar {1122} GaN bulk substrates [J].
Funato, Mitsuru ;
Ueda, Masaya ;
Kawakami, Yoichi ;
Narukawa, Yukio ;
Kosugi, Takao ;
Takahashi, Masayoshi ;
Mukai, Takashi .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (24-28) :L659-L662
[8]  
Guo X., 2016, ARXIV160303726
[9]   Analysis of loss mechanisms in InGaN solar cells using a semi-analytical model [J].
Huang, Xuanqi ;
Fu, Houqiang ;
Chen, Hong ;
Lu, Zhijian ;
Ding, Ding ;
Zhao, Yuji .
JOURNAL OF APPLIED PHYSICS, 2016, 119 (21)
[10]   Femtosecond Z-scan measurement of GaN [J].
Huang, YL ;
Sun, CK ;
Liang, JC ;
Keller, S ;
Mack, MP ;
Mishra, UK ;
DenBaars, SP .
APPLIED PHYSICS LETTERS, 1999, 75 (22) :3524-3526