Structural and electrical properties of polycrystalline AgxGa2-xSe2 (0.4 ≤ x ≤ 1.6) thin films

Thin films of AgxGa2-xSe2 (AGS) have been prepared onto glass substrates by stacked elemental layer (SEL) deposition technique in vacuum. The atomic composition of the films has been measured by energy dispersive analysis of X-ray (EDAX) method. The structural and electrical properties of the films are ascertained by X-ray diffraction (XRD) and standard dc method using a cryostat, respectively. The structural and electrical parameters have been found for different non-molecularity of the films. The films ascertain the compositional uniformity. The X-ray diffraction (XRD) reveals that the films are polycrystalline in nature. The electrical. conductivity of the films (at room temperature) having different non-molecularity has been found to vary from 1.36x10(-6) to 4.93x10(-3) (Omega-cm)(-1). These films support thermally activated process. The activation energies vary between 21.61 and 60.64 meV as non-molecularity varies between -0.798 and 1.710.