Study on Structure and Property of Lutetium Introduced Silicon Clusters LuSi n (n=3-10) and Their Anions with Density Functional Theory

被引:14
作者
He, Shuang [1 ,2 ,3 ]
Yang, Jucai [1 ,2 ,4 ]
机构
[1] Inner Mongolia Univ Technol, Sch Chem Engn, Hohhot 010051, Peoples R China
[2] Inner Mongolia Key Lab Theoret & Computat Chem Si, Hohhot 010051, Peoples R China
[3] Inner Mongolia Vocat Coll Chem Engn, Hohhot 010070, Peoples R China
[4] Inner Mongolia Univ Technol, Sch Energy & Power Engn, Hohhot 010051, Peoples R China
基金
中国国家自然科学基金;
关键词
LuSin; The most stable structure; Electron affinity; Relative stability; HOMO-LUMO gap; PSEUDOPOTENTIAL BASIS-SETS; ELECTRONIC-PROPERTIES; PROJECTION OPERATORS; STABILITIES; SI; THERMOCHEMISTRY; AFFINITIES; YB; POLARIZABILITIES; IMPURITY;
D O I
10.1007/s10876-017-1225-x
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
The geometries, electronic structures and properties including simulated photoelectron spectra (PES), adiabatic electron affinities (AEAs), and relative stability of LuSi (n) (n = 3-10) and their anions were investigated adopting the ABCluster global search technique combined with density functional methods. The results revealed that the most stable structures of neutral belong to "substitutional structure", but not for their anions. The additional electron effects on the most stable structure are intense. The TPSSh AEAs of LuSi (n) (n = 6-9) agree excellently with the experimental data. The mean absolute error and the largest error are only 0.03 eV and 0.05 eV, respectively. The agreement between the experimental and theoretical PES indicates that the most stable structures of LuSi (n) (-) (n = 6-10) are trustworthy. The DEs and charge transfer are calculated to explain the relative stabilities. HOMO-LUMO gaps reveal that introducing Lu atom to Si (n) (n = 3-10) raises the photochemical sensitivity.
引用
收藏
页码:2309 / 2322
页数:14
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