Photoluminescence of InGaAsN/GaAs single quantum well grown by metal-organic chemical vapor deposition

被引：0

作者：

Lai, CT

Yang, YL

Wu, BR

Huang, JH

Jan, GJ ^{[1
]}

机构：

[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 10764, Taiwan

[2] Natl Taiwan Univ, Grad Inst Electroopt Engn, Taipei 10764, Taiwan

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2003年 / 42卷

关键词：

single quantum well; photoluminescence; MOCVD; carrier localization; InGaAsN;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report the measured results of the temperature dependent photoluminescence (PL) spectra of In0.3Ga0.7As/GaAs and In0.3Ga0.7As0.998N0.002/GaAs single quantum well (SQW) grown by metal-organic chemical vapor deposition (MOCVD), The optical properties of the InGaAs epilayers incorporated with small concentration of nitrogen and two growth temperatures have been investigated. The results show that the optical transition energy on the PL spectra presents the blue shift instead of the red shift raising the growth temperature front 520 degreesC to 550 degreesC with or without nitro.-en incorporation. Two (or three) energy features oil PL ruin of InGaAsN SQW grown at growth temperature 520 degreesC were obtained and presumably ascribed to the formation of In-rich clusters. In addition, inverted "S-curve" on temperature dependence PL transition energy was observed in InGaAsN SQW grown at 520 degreesC and the carrier localization is interpreted.

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页码：S746 / S749

页数：4

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