Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory

被引：161

作者：

Gao, Bin ^{[1
]}

Sun, Bing ^{[1
]}

Zhang, Haowei ^{[1
]}

Liu, Lifeng ^{[1
]}

Liu, Xiaoyan ^{[1
]}

Han, Ruqi ^{[1
]}

Kang, Jinfeng ^{[1
]}

Yu, Bin ^{[2
]}

机构：

[1] Peking Univ, Key Lab Microelect Devices & Circuits, Inst Microelect, Beijing 100871, Peoples R China

[2] SUNY Albany, Coll Nanoscale Sci & Engn, Albany, NY 12203 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2009年 / 30卷 / 12期

关键词：

Conductive filament (CF); nonvolatile memory; oxygen vacancy; resistive switching; LOW-POWER;

D O I：

10.1109/LED.2009.2032308

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A unified model is proposed to elucidate the resistive switching behavior of metal-oxide-based resistive random access memory devices using the concept of electron hopping transport along filamentary conducting paths in dielectric layer. The transport calculation shows that a low-electron-occupied region along the conductive filament (CF) is formed when a critical electric field is applied. The oxygen vacancies in this region are recombined with oxygen ions, resulting in rupture of the CFs. The proposed mechanism was verified by experiments and theoretical calculations. In this physical model, the observed resistive switching behaviors in the oxide-based systems can be quantified and predicted.

引用

页码：1326 / 1328

页数：3

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