Comparison of Density Gradient and NEGF for 3D Simulation of a Nanowire MOSFET

被引：19

作者：

Brown, Andrew R. ^{[1
]}

Martinez, Antonio ^{[1
]}

Seoane, Natalia ^{[1
]}

Asenov, Asen ^{[1
]}

机构：

[1] Univ Glasgow, Dept Elect & Elect Engn, Glasgow G12 8LT, Lanark, Scotland

来源：

PROCEEDINGS OF THE 2009 SPANISH CONFERENCE ON ELECTRON DEVICES | 2009年

关键词：

D O I：

10.1109/SCED.2009.4800450

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The density gradient quantum correction to the conventional drift-diffusion simulation technique has become a well established method to include quantum mechanical effects without resorting to a full quantum transport solution. The results obtained from this method, however, can depend greatly on the values of certain parameters used, and it is usual to calibrate the simulation against more rigorous quantum transport simulations such as non-equilibrium Green's functions (NEGF). Here we present an analysis of the effect of varying fitting parameters within density gradient and compare the results to NEGF simulations for a nanowire transistor.

引用

页码：140 / 143

页数：4

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