Research on the surface morphology of AlxGa1-xAs in molecular beam epitaxy

被引：0

作者：

Wang, Yi ^{[1
]}

Wei, Wen-zhe ^{[1
]}

Yang, Chen ^{[1
]}

Guo, Xiang ^{[1
]}

Zhao, Zhen ^{[1
]}

Zhou, Hai-yue ^{[1
]}

Luo, Zi-Jang ^{[2
]}

Hu, Ming-zhe ^{[1
]}

Ding, Zhao ^{[1
]}

机构：

[1] Guizhou Univ, Dept Elect Sci & Technol, Guiyang 550025, Guizhou, Peoples R China

[2] Guizhou Univ Finance & Econ, Sch Educ Adm, Guiyang 550004, Guizhou, Peoples R China

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2016年 / 122卷 / 03期

基金：

中国国家自然科学基金;

关键词：

GROWTH; GAAS; MBE;

D O I：

10.1007/s00339-016-9720-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The influence of deposition of aluminum on adatoms diffusion and evaporation during the growth of AlGaAs alloy layer on GaAs (001) surface is investigated. The real space scanning tunneling microscopy (STM) images showed the obvious changes on different AlGaAs surface morphology; reflection high-energy electron diffraction (RHEED) is also used to estimate the deposition. STM images and RHEED patterns showed the pits coverage and roughness of deposition surfaces caused by stronger Al-As bonds and slower surface migration rate of aluminum; Ehrlich-Schwoebel potential is considered as possible explanation of steps forming on the surface morphology. A conjecture for the formation of surfaces morphology and its influence on subsequent growth is proposed.

引用

页码：1 / 6

页数：6

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