Enhanced tunable properties of Ba0.6Sr0.4TiO3 thin films grown on Pt/Ti/SiO2/Si substrates using MgO buffer layers

被引：42

作者：

Zhu, Weicheng ^{[1
]}

Cheng, Jinrong ^{[1
]}

Yu, Shengwen ^{[1
]}

Gong, Jia ^{[1
]}

Meng, Zhongyan ^{[1
]}

机构：

[1] Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 03期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2433029

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ba0.6Sr0.4TiO3 (BST) thin films were prepared on MgO buffered Pt(111)/Ti/SiO2/Si substrates by pulsed laser deposition. The crystallographic structure, interface characteristics, and dielectric properties of BST thin films are strongly dependent on MgO thickness. BST thin films exhibit (111) preferred orientation when MgO layer is thicker than 5 nm. The MgO layer can mitigate the interdiffusion between BST and Pt, causing the dielectric loss and leakage current of BST thin films to decrease significantly. The dielectric loss, tunability, and the largest figure of merit of BST thin films on 10 nm MgO achieve 0.009, 30%, and 33.4, respectively. (c) 2007 American Institute of Physics.

引用

页数：3

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