Room temperature ferromagnetism in Ni-doped ZnO films

被引：48
|
作者：
Hou, Deng-Lu [1 ]
Zhao, Rui-Bin [1 ,2 ]
Wei, Yan-Yan [1 ]
Zhen, Cong-Mian [1 ]
Pan, Cheng-Fu [1 ]
Tang, Gui-De [1 ]
机构：
[1] Hebei Normal Univ, Dept Phys, Shijiazhuang 050016, Peoples R China
[2] Hebei Med Univ, Dept Med Phys, Shijiazhuang 050017, Peoples R China
来源：
CURRENT APPLIED PHYSICS | 2010年 / 10卷 / 01期
关键词：
ZnO; Room temperature ferromagnetism; Oxygen vacancy; Photoluminescence; PULSED-LASER DEPOSITION; THIN-FILMS; MAGNETIC-PROPERTIES; GROWTH; PHOTOLUMINESCENCE; NANOPARTICLES; ORIGIN;
D O I：
10.1016/j.cap.2009.05.007
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Zn(1-x)Ni(x)O (x = 0.02, 0.03, 0.04, 0.05, 0.07) films were prepared using magnetron sputtering. X-ray diffraction indicates that all samples have a wurtzite structure with c-axis orientation. X-ray photoelectron spectroscopy results reveal that the Ni ion is in a +2 charge state in these films. Magnetization measurements indicate that all samples have room temperature ferromagnetism. In order to elucidate the origin of the ferromagnetism, Zn(0.97)Ni(0.03)O films Were grown under different atmospheric ratios of argon to oxygen. The results show that as the fraction of oxygen in the atmosphere decreases, both the saturation magnetization and the number of oxygen vacancies increase, confirming that the ferromagnetism is correlated with the oxygen vacancy level. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：124 / 128
页数：5
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