Avalanche photodiode punch-through gain determination through excess noise analysis

被引：24

作者：

Liu, Han-Din ^{[1
]}

Pan, Huapu ^{[1
]}

Hu, Chong ^{[1
]}

McIntosh, Dion ^{[1
]}

Lu, Zhiwen ^{[1
]}

Campbell, Joe ^{[1
]}

Kang, Yimin ^{[2
]}

Morse, Mike ^{[2
]}

机构：

[1] Univ Virginia, Charlottesville, VA 22904 USA

[2] Intel Corp, Santa Clara, CA 95054 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 106卷 / 06期

关键词：

SILICON;

D O I：

10.1063/1.3226659

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new approach to determine the multiplication gain at punch-through for an avalanche photodiode with separate absorption and multiplication regions from excess noise measurement is discussed. Correctly determining the gain at punch-through is crucial for characterizing performance parameters of this type of avalanche photodiode. In order to illustrate the viability of this technique, in this work, a Ge on Si avalanche photodiode is analyzed. At a punch-through bias of 15 V, the multiplication gain was determined to be similar to 1.54 while a simulation based on the device structure yielded a punch-through gain of 1.65. (C) 2009 American Institute of Physics. [doi:10.1063/1.3226659]

引用

页数：4

共 7 条

[1] MULTIPLICATION NOISE OF WIDE-BANDWIDTH INP/INGAASP/INGAAS AVALANCHE PHOTODIODES [J].