Photoconductor gain mechanisms in GaN ultraviolet detectors

被引：161

作者：

Munoz, E ^{[1
]}

Monroy, E ^{[1
]}

Garrido, JA ^{[1
]}

Izpura, I ^{[1
]}

Sanchez, FJ ^{[1
]}

SanchezGarcia, MA ^{[1
]}

Calleja, E ^{[1
]}

Beaumont, B ^{[1
]}

Gibart, P ^{[1
]}

机构：

[1] CNRS,CRHEA,F-06560 VALBONNE,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 07期

关键词：

D O I：

10.1063/1.119673

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaN photoconductive detectors have been fabricated on sapphire substrates by metal organic vapor phase epitaxy and gas-source molecular beam epitaxy on Si (111) substrates. The photodetectors showed high photoconductor gains, a very nonlinear response with illuminating power, and an intrinsic nonexponential photoconductance recovery process, A novel photoconductor gain mechanism is proposed to explain such results, based on a modulation of the conductive volume of the layer. (C) 1997 American Institute of Physics.

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页码：870 / 872

页数：3

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