Fabrication of Cu(InGa)Se2 Thin-Film Solar Cells Grown with Ionized Ga Source

被引：0

作者：

Nakashiba, Tetusya ^{[1
]}

Yamada, Akira ^{[1
]}

Zhang, Li ^{[1
]}

Konagai, Makoto ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Phys Elect, Photovolta Res Ctr PVREC, Meguro Ku, Tokyo 1528552, Japan

来源：

COMMAD: 2008 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS & DEVICES | 2008年

关键词：

solar cells; Cu(InGa)Se-2; Photovoltaics;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Polycrystalline Cu(InGa)Se-2 (CIGS) thin films have been grown onto a soda-lime glass substrate by the co-evaporation process using ionized Ga. It was found from the XRD and Raman measurements that the crystallinity of the films grown with ionized Ga was equivalent to the films grown with normal Ga. In addition, a reduction of defect densities measured by the admittance spectroscopy and the improvement of the reverse saturation current assessed by the I-V characteristics were observed in the films grown with ionized Ga, implying an improvement of film quality. Furthermore, an enlargement of grain size was shown. Finally, the CIGS solar cell with a promising efficiency of 15.1% has been achieved by using the ionized Ga source.

引用

页码：281 / 284

页数：4

共 12 条

[1]

Hanna G, 2000, PHYS STATUS SOLIDI A, V179, pR7, DOI 10.1002/1521-396X(200005)179:1<R7::AID-PSSA99997>3.0.CO

[2]

2-4

[3] Growth of polycrystalline Cu(In,Ga)Se2 thin films using a radio frequency-cracked Se-radical beam source and application for photovoltaic devices [J].