Valence Band Offset at MoO3/CdTe Interface Probed by X-ray Photoelectron Spectroscopy

被引：0

作者：

Paudel, N. R. ^{[1
]}

Yan, Y.

机构：

[1] Univ Toledo, Dept Phys & Astron, Toledo, OH 43606 USA

来源：

2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC) | 2014年

关键词：

CdTe; VBO; MoO3; Cu-free; back contact; solar cells; XPS; TELLURIDE;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

CdTe-based thin-film solar cells fabricated with Cufree MoO3/Au back contacts have achieved cell efficiencies as high as 14%. The incorporation of MoO3 buffer layers improves the open circuit voltage but reduces the fill factor (FF) of the CdTe cells compared to the cells using Au-only contacts. X-ray photoelectron spectroscopy measurements suggest a 2.75+/-0.20 eV valence band offset (VBO) between CdTe and MoO3. Such a large VBO explains the decrease in FF with the increase of the thickness of the MoO3 buffer layer.

引用

页码：2397 / 2399

页数：3

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