Plasmon-enhanced heat dissipation in GaN-based two-dimensional channels

被引：36

作者：

Matulionis, A. ^{[1
]}

Liberis, J. ^{[1
]}

Matulioniene, I. ^{[1
]}

Ramonas, M. ^{[1
]}

Sermuksnis, E. ^{[1
]}

Leach, J. H. ^{[2
]}

Wu, M. ^{[2
]}

Ni, X. ^{[2
]}

Li, X. ^{[2
]}

Morkoc, H. ^{[2
]}

机构：

[1] Inst Semicond Phys, Fluctuat Res Lab, LT-01108 Vilnius, Lithuania

[2] Virginia Commonwealth Univ, Dept Elect & Comp Engn, Richmond, VA 23284 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 19期

关键词：

HOT-PHONONS; LIFETIME; DECAY; TIME;

D O I：

10.1063/1.3261748

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Decay of nonequilibrium longitudinal optical (LO) phonons is investigated at room temperature in two-dimensional electron gas channels confined in nearly lattice-matched InAlN/AlN/GaN structures. A nonmonotonous dependence of the LO-phonon lifetime on the supplied electric power is reported for the first time and explained in terms of plasmon-LO-phonon resonance tuned by applied bias at a fixed sheet density (8 x 10(12) cm(-2)) The shortest lifetime of 30 +/- 15 fs. is found at the power of 20 +/- 10 nW/electron. (C) 2009 American Institute of Physics. [doi:10.1063/1.3261748]

引用

页数：3

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