Capacitance-voltage measurements of monolayer MoS2 metal-oxide-semiconductor capacitors

Monolayer MoS2 received great attention as a promising semiconductor material in metal-oxide-semiconductor devices. However, little attention has been given to the capacitance-voltage measurements of monolayer MoS2 metal-oxide-semiconductor devices. Here, we report the capacitance-voltage measurements of metal-oxide-semiconductor capacitors composed of monolayer MoS2 and Al2O3 gate dielectric. Capacitance-voltage curves of monolayer MoS2 metal-oxide-semiconductor capacitors exhibit seemingly high-frequency behavior at all measured frequencies with zero minimum capacitance. We described these distinct features by considering the dominant role of quantum capacitance of monolayer MoS2. Based on the frequency dispersion, we estimated the minimum interface trap density of similar to 10 12 eV(-1) cm(-2), which is comparable with those of multilayer MoS2 metaloxide-semiconductor capacitors. These results demonstrate that it is important to understand quantum capacitance for the enhanced performance of metal-oxide-semiconductor devices based on monolayer MoS2 or other transition metal dichalcogenides.