Interfacial and Electrical Characterization of HfO2-Gated MOSCs and MOSFETs by C-V and Gated-Diode Method

被引：2

作者：

Chen, S. Y. ^{[1
]}

Chen, H. W. ^{[1
]}

Chen, C. H. ^{[1
]}

Chiu, F. C. ^{[1
]}

Liu, C. H. ^{[1
]}

Hsieh, Z. Y. ^{[1
]}

Huang, H. S. ^{[1
]}

Hwang, H. L. ^{[1
]}

机构：

[1] Natl Taipei Univ Technol, Inst Mechatron Eng, Taipei, Taiwan

来源：

PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS 6 | 2008年 / 16卷 / 05期

关键词：

D O I：

10.1149/1.2981594

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Metal-oxide-semiconductor capacitors (MOSCs) and Metal-oxide-semiconductor field-effect transistors (MOSFETs) incorporating hafnium dioxide (HfO2) dielectrics were fabricated and investigated. The electrical and interfacial properties were characterized including C-V, I-DS-V-GS, the mean density of interface traps per unit area and energy ((D-it) over bar), energy of interface traps density distribution, interface traps density (Nit), density of near-interface oxide traps per unit area (N-NIOT), effective capture cross-section area (sigma(s)), minority carrier lifetime (tau(FIJ)) and surface recombination velocity (s(o)) were studied. Furthermore, a comparison with MOSFETs using conventional SiO2 as gate dielectrics was also made.

引用

页码：131 / +

页数：3

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