Bis(β-ketoiminate) dioxo tungsten(VI) complexes as precursors for growth of WOx by aerosol-assisted chemical vapor deposition

被引：3
作者：
Su, Xiaoming [1 ]
Panariti, Persi [1 ]
Abboud, Khalil A. [1 ]
McElwee-White, Lisa [1 ]
机构：
[1] Univ Florida, Dept Chem, Gainesville, FL 32611 USA
来源：
POLYHEDRON | 2019年 / 169卷
关键词：
Tungsten oxide; Aerosol-assisted chemical vapor deposition; Single source precursors; Metal oxo complexes; Metal oxide films; OXO-ALKOXIDE COMPLEXES; THIN-FILMS; BETA-KETOIMINATE; OXIDE FILMS; PRESSURE; LIGANDS; KAPPA(2)-BETA-DIKETONATE; CARBON; MOCVD; AACVD;
D O I：
10.1016/j.poly.2019.05.013
中图分类号：
O61 [无机化学];
学科分类号：
070301 ; 081704 ;
摘要：
Bis(beta-ketoiminate) dioxo tungsten(VI) complexes WO2L2 (L = acNac, acNac(Me), acNac(Et)) have been synthesized and characterized. The thermal behaviors and possible decomposition mechanisms of these dioxo compounds were studied by TGA, MS and thermolysis. The performance of WO2(acNac(Me))(2) as an AACVD precursor was evaluated at growth temperatures of 250-550 degrees C using nitrogen as the carrier gas. The elemental compositions of the as-deposited and sputtered tungsten oxide films were determined by XPS. The morphology and stoichiometry of the as-deposited films were studied by SEM and XRD. (C) 2019 Elsevier Ltd. All rights reserved.
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页码：219 / 227
页数：9
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