Room-temperature photoinduced magnetoresistance effect in GaAs including MnSb nanomagnets

被引：27

作者：

Akinaga, H

Mizuguchi, M

Ono, K

Oshima, M

机构：

[1] Natl Inst Adv Interdisciplinary Res, Joint Res Ctr Atom Technol, Tsukuba, Ibaraki 3058562, Japan

[2] Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan

[3] Univ Tokyo, Grad Sch Engn, Bunkyo Ku, Tokyo 1138656, Japan

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 18期

关键词：

D O I：

10.1063/1.126421

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We show a photoinduced positive magnetoresistance (MR) effect (about 20%) under a low magnetic field (less than 0.1 T) at room temperature. The photoinduced MR effect has been observed in GaAs including nanoscale MnSb islands, when photons with the energy above the band gap of GaAs irradiated the sample. The photoinduced phenomena are due to an enhancement of tunneling probability between MnSb islands by photogenerated carriers in the GaAs matrix. (C) 2000 American Institute of Physics. [S0003-6951(00)02718-2].

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页码：2600 / 2602

页数：3

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