An empirical model for dielectric constant and electronic polarizability of binary (ANB8-N) and ternary (ANB2+NC27-N) tetrahedral semiconductors

被引:18
|
作者
Verma, A. S. [1 ]
Singh, R. K. [2 ]
Rathi, S. K. [2 ]
机构
[1] Panjab Univ, Dept Phys, Chandigarh 160014, India
[2] BSA Coll, Dept Phys, Mathura 281004, India
关键词
Semiconductors; Optical properties; BULK MODULUS; ROCK-SALT; BOND SUSCEPTIBILITIES; LATTICE-CONSTANT; ENERGY; ELECTRONEGATIVITY; PREDICTION; ZINCBLENDE; PRESSURE; GAP;
D O I
10.1016/j.jallcom.2009.07.067
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
An overview of the understanding of correlation between valence electron and the optical properties of binary (A(N)B(8-N)) and ternary (A(N)B(2+N)C(2)(7-N)) tetrahedral semiconductors is presented here. We have presented two expressions relating the dielectric constant and electronic polarizability for the transition metal chalcogenides and pnictides (A(II)B(VI) and A(III)B(V)) and chalcopyrites (A(I)B(III)C(2)(VI) and A(II)B(IV)C(2)(V)) with the product of valence electrons and nearest neighbour distance d (angstrom). The dielectric constant and electronic polarizability of these solids exhibit a linear relationship when plotted on a log-log scale against the nearest neighbour distance d (angstrom), but fall on different straight lines according to the valence electron product of the compounds. We have applied the proposed relation on these solids and found a better agreement with the experimental data as compared to the values evaluated by earlier researchers. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:795 / 800
页数:6
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