Study of electromigration in Sn-Ag-Cu micro solder joint with Ni interfacial layer

被引:15
作者
Madanipour, Hossein [1 ]
Kim, Yi-Ram [1 ]
Kim, Choong-Un [1 ]
Mishra, Dibyajat [2 ]
Thompson, Patrick [2 ]
机构
[1] Univ Texas Arlington, Dept Mat Sci & Engn, Arlington, TX 76019 USA
[2] Texas Instruments Inc, Dallas, TX 75243 USA
关键词
Intermetallics; Diffusion; Microstructure; Electromigration; Solder; Void;
D O I
10.1016/j.jallcom.2020.158043
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
This paper reports the extreme sensitivity of the microstructure evolution in Sn-Ag-Cu (SAC) micro-solder joint, consisting of 15-20 mu m thick solder alloy and electrolytic Ni plated Cu electrodes, to electromigration (EM) conditions resulting from a kinetic competition between the growth of Ni3S4 intermetallic compound (IMC) and EM of Sn in solder matrix. Microstructural analysis of samples tested at various conditions reveals that the voiding in the solder joint develops to the full extent only when the EM rate of Sn in the solder alloy is sufficiently greater than the growth rate of Ni3Sn4 IMC because the IMC phase is EM-inactive. The decisive evidence for such behavior is found from the samples tested at 160 and 170 degrees C under 35 kA/cm(2). The samples tested at 170 degrees C show the classic solder joint microstructure that typically develops under the influence of EM, that is the exaggerated growth of Ni3Sn4 at the anode as a result of Ni-EM and voids at the cathode interface of the joint as a result of Sn-EM. Contrarily, such characteristic features are not found in samples tested at 160 degrees C, instead, the joint is fully converted to Ni3Sn4 without sign of its biased growth and voiding activities. The near absence of biased EM microstructure at 160 degrees C is believed to result from the stress-gradient developed by Sn EM counteracting the EM force on Ni. No such effect is at work at higher temperatures due to the significantly higher initial Sn EM rate which leads to voids and reduces the stress gradient. (C) 2020 Elsevier B.V. All rights reserved.
引用
收藏
页数:8
相关论文
共 31 条
[1]   Intermetallic compounds in 3D integrated circuits technology: a brief review [J].
Annuar, Syahira ;
Mahmoodian, Reza ;
Hamdi, Mohd ;
Tu, King-Ning .
SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, 2017, 18 (01) :693-703
[2]   ELECTROMIGRATION - A BRIEF SURVEY AND SOME RECENT RESULTS [J].
BLACK, JR .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (04) :338-&
[3]   ELECTROMIGRATION IN THIN ALUMINUM FILMS ON TITANIUM NITRIDE [J].
BLECH, IA .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) :1203-1208
[4]   Fast phase transformation due to electromigration of 18 μm microbumps in three-dimensional integrated-circuit integration [J].
Chang, Y. W. ;
Chen, Chih ;
Chang, T. C. ;
Zhan, C. J. ;
Juang, J. Y. ;
Huang, Annie T. .
MATERIALS LETTERS, 2014, 137 :136-138
[5]   A new failure mechanism of electromigration by surface diffusion of Sn on Ni and Cu metallization in microbumps [J].
Chang, Yuan-Wei ;
Hu, Chia-chia ;
Peng, Hsin-Ying ;
Liang, Yu-Chun ;
Chen, Chih ;
Chang, Tao-chih ;
Zhan, Chau-Jie ;
Juang, Jing-Ye .
SCIENTIFIC REPORTS, 2018, 8
[6]   Electromigration effect upon the Sn/Ag and Sn/Ni interfacial reactions at various temperatures [J].
Chen, CM ;
Chen, SW .
ACTA MATERIALIA, 2002, 50 (09) :2461-2469
[7]   Critical Concerns in Soldering Reactions Arising from Space Confinement in 3-D IC Packages [J].
Chuang, H. Y. ;
Yang, T. L. ;
Kuo, M. S. ;
Chen, Y. J. ;
Yu, J. J. ;
Li, C. C. ;
Kao, C. Robert .
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2012, 12 (02) :233-240
[8]   Evaluation of Electromigration Behaviors of Pb-Free Microbumps in Three-Dimensional Integrated Circuit Packaging [J].
Hsu, Hao ;
Lin, Tzu-Yang ;
Ouyang, Fan-Yi .
JOURNAL OF ELECTRONIC MATERIALS, 2014, 43 (01) :236-246
[9]   In Situ Electromigration in Cu-Sn and Ni-Sn Critical Solder Length for Three-Dimensional Integrated Circuits [J].
Huang, Y. T. ;
Chen, C. H. ;
Lee, B. H. ;
Chen, H. C. ;
Wang, C. M. ;
Wu, Albert T. .
JOURNAL OF ELECTRONIC MATERIALS, 2016, 45 (12) :6163-6170
[10]   Electromigration-induced back stress in critical solder length for three-dimensional integrated circuits [J].
Huang, Y. T. ;
Hsu, H. H. ;
Wu, Albert T. .
JOURNAL OF APPLIED PHYSICS, 2014, 115 (03)