Dislocation core structures in (0001) InGaN

被引：16

作者：

Rhode, S. L. ^{[1
]}

Horton, M. K. ^{[2
]}

Sahonta, S. -L. ^{[1
]}

Kappers, M. J. ^{[1
]}

Haigh, S. J. ^{[3
,4
]}

Pennycook, T. J. ^{[4
,5
]}

McAleese, C. ^{[1
]}

Humphreys, C. J. ^{[1
]}

Dusane, R. O. ^{[6
]}

Moram, M. A. ^{[1
,2
]}

机构：

[1] Univ Cambridge, Dept Mat Sci & Met, Charles Babbage Rd, Cambridge CB3 0FS, England

[2] Univ London Imperial Coll Sci Technol & Med, Dept Mat, London SW7 2AZ, England

[3] Univ Manchester, Sch Mat, Manchester M13 9PL, Lancs, England

[4] STFC Daresbury Labs, SuperSTEM, Warrington WA4 4AD, Cheshire, England

[5] Univ Oxford, Dept Mat, Parks Rd, Oxford OX1 3PH, England

[6] Indian Inst Technol, Dept Met Engn & Mat Sci, Bombay 400076, Maharashtra, India

来源：

JOURNAL OF APPLIED PHYSICS | 2016年 / 119卷 / 10期

基金：

英国工程与自然科学研究理事会;

关键词：

THREADING DISLOCATION; PHASE-SEPARATION; ATOMIC CONFIGURATIONS; SCREW DISLOCATIONS; QUANTUM-WELLS; PIT FORMATION; GAN; EDGE; FILMS; SEGREGATION;

D O I：

10.1063/1.4942847

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Threading dislocation core structures in c-plane GaN and InxGa1-xN (0.057 <= x <= 0.20) films were investigated by aberration-corrected scanning transmission electron microscopy. a-type dislocations are unaffected by alloying with indium and have a 5/7-atom ring core structure in both GaN and InxGa1-xN. In contrast, the dissociation lengths of (a+c)-type dislocations are reduced, and new 7/4/9-atom ring and 7/4/8/5-atom ring core structures were observed for the dissociated (a+c)-type dislocations in InxGa1-xN, which is associated with the segregation of indium near (a+c)-type and c-type dislocation cores in InxGa1-xN, consistent with predictions from atomistic Monte Carlo simulations. (C) 2016 AIP Publishing LLC.

引用

页数：7

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