A Pin-Hole Free Architecture for Vertical Infrared Photodetectors Based on Thin-Film Organic/Inorganic Hybrid Nanocomposite

被引：17
作者：
Jahromi, Hamed Dehdashti [1 ]
Sheikhi, Mohammad Hossein [1 ]
机构：
[1] Shiraz Univ, Sch Elect & Comp Engn, Dept Commun & Elect, Res Lab Fabricat Adv Semicond Devices, Shiraz 7193616511, Iran
来源：
IEEE SENSORS JOURNAL | 2016年 / 16卷 / 06期
关键词：
Colloidal quantum dot; infrared photodetector; pinhole; short circuit; QUANTUM; NANOCRYSTALS; GAIN; PHOTOCONDUCTIVITY;
D O I：
10.1109/JSEN.2015.2506661
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new architecture for thin-film organic/ inorganic infrared (IR) photodetector is introduced. An IR photodetector based on the architecture, composed of PEDOT-PSS polymeric hole transporter layer and hybrid nanocomposite of PbSe/MEH-PPV photon absorber layer sandwiched between ITO and Al contacts is fabricated and characterized. This architecture removes the issue of catastrophic shorts occurring between the top and bottom contacts in vertical structure thin-film organic/ inorganic photodetectors. Moreover, measurements show that, this structure reduces the device dark current significantly.
引用
收藏
页码：1634 / 1640
页数：7
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