True dipole at the indium tin oxide/organic semiconductor interface

被引：6

作者：

Lin, Yow-Jon ^{[1
]}

Hong, Jia-huang

Lien, Yi-Chun

Liu, Bei-Yuan

机构：

[1] Natl Changhua Univ Educ, Inst Photon, Changhua 500, Taiwan

[2] Natl Changhua Univ Educ, Dept Phys, Changhua 500, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 26期

关键词：

D O I：

10.1063/1.2424646

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

There has been long-standing interest in the development of organic optoelectronic devices. However, the authors find that the previously reported interface-dipole calculations seem to be inaccurate, owing to a persistent neglect of the induced band bending of indium tin oxide (ITO) by coating of organic semiconductors on ITO. In this study, the correlation between the induced band bending of ITO in the presence of organic semiconductors on ITO and the dipole at the interface was examined. (c) 2006 American Institute of Physics.

引用

页数：3

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