Transient phenomena in Cu(In,Ga)Se2 solar modules investigated by electroluminescence imaging

被引：14
|
作者：
Tran, T. M. H. [1 ]
Pieters, B. E. [1 ]
Ulbrich, C. [1 ]
Gerber, A. [1 ]
Kirchartz, T. [2 ]
Rau, U. [1 ]
机构：
[1] Forschungszentrum Julich, Photovolta IEK5, D-52425 Julich, Germany
[2] Univ London Imperial Coll Sci Technol & Med, Dept Phys, South Kensington SW7 2AZ, England
来源：
THIN SOLID FILMS | 2013年 / 535卷
关键词：
Cu(In; Ga)Se-2 solar cells; Metastability; Electroluminescence; PERSISTENT PHOTOCONDUCTIVITY; DEFECTS;
D O I：
10.1016/j.tsf.2012.10.039
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Industrially fabricated thin-film modules are investigated by electroluminescence (EL) photography. We observe metastable transients in a series of successive images recorded during application of forward bias immediately after the Cu(In,Ga)Se-2 modules were kept in the dark for several hours. Our experiments are conducted in the dark either under constant current (monitoring the module voltage) or vice versa. For both situations, the EL intensities increase with time, whereas we observe a decrease of the overall module voltage (at fixed current) or an increase of the current (at fixed voltage). We ascribe our observations to the simultaneous decrease of the bulk series resistance R-s and the reduction of recombination currents (an increase in the junction resistance R-j) during the forward bias soaking. A quantitative analysis of our data shows that the reduction of R-s we observe is much stronger than the increase of R-j. We also show that the bulk series resistance can strongly adulterate the determination of the sheet resistance of the front ZnO from EL images. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：307 / 310
页数：4
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