Low Actuation Wideband RF MEMS Shunt Capacitive Switch

被引：8

作者：

Mafinejad, Yasser ^{[1
]}

Kouzani, Abbas Z. ^{[1
]}

Mafinezhad, Khalil

Kaynak, Akif ^{[1
]}

机构：

[1] Deakin Univ, Sch Engn, Waurn Ponds, Vic 3216, Australia

来源：

2012 INTERNATIONAL WORKSHOP ON INFORMATION AND ELECTRONICS ENGINEERING | 2012年 / 29卷

关键词：

High impedance short transmission line; low actuation voltage; wideband; RF MEMS; shunt switch;

D O I：

10.1016/j.proeng.2012.01.129

中图分类号：

TH [机械、仪表工业];

学科分类号：

0802 ;

摘要：

A wide bandwidth low actuation voltage RF MEMS capacitive shunt switch is designed and simulated. The proposed switch is designed for a low actuation voltage of 12 volts applicable to wireless systems. High frequency characteristics of the RF MEMS switches can be specified by coupling capacitors in up-state position C-u. This capacitor is in trade-off with actuation voltage. In the proposed switch, the capacitor is compensated by incorporating two short high impedance transmission lines as a T matching circuit. Simulating the switch demonstrates great improvement in RF characteristics of the switch particularly in reflection coefficient in up-state position. (C) 2011 Published by Elsevier Ltd. Selection and/or peer-review under responsibility of Harbin University of Science and Technology

引用

页码：1292 / 1297

页数：6

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