Multi-frequency electron spin resonance analysis of interfacial Ge dangling bond defects in condensation-grown (1 0 0)Si/SiO2/Si1-xGex/SiO2

被引：0

作者：

Stesmans, A. ^{[1
]}

Somers, P. ^{[1
]}

Afanas'ev, V. V. ^{[1
]}

机构：

[1] Katholieke Univ Leuven, Dept Phys, B-3001 Louvain, Belgium

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2013年 / 28卷 / 01期

关键词：

(111)SI/SIO2 INTERFACE; PB DEFECTS; FABRICATION; SILICON; ULTRATHIN;

D O I：

10.1088/0268-1242/28/1/015003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The multi-frequency electron spin resonance (ESR) study of the GePb1 Ge dangling bond (DB) interface defect, appearing identically at both SiO2/GexSi1-x interfaces in condensation-grown SiO2/GexSi1-x/SiO2/(1 0 0)Si heterostructures (0.28 <= x <= 0.93), shows that the ESR signal width is dominated by inhomogeneous broadening due to a strain-induced spread in g. For the x = 0.73 case, this results in a frequency (nu)-dependent peak-to-peak broadening of Delta B-pp(SB)/nu = 0.62 G/GHz for the applied magnetic field B along the g(3) principal axis Ge DB direction. Compared to the familiar Si P-b-type interface defects in (1 0 0)Si/SiO2, the enhanced nu-dependent broadening scales with the spin-orbit coupling constant ratio lambda(Ge)/lambda(Si). The natural inhomogeneous broadening due to unresolved Ge-73 hyperfine interaction is found to be below similar to 1.56 G. While the results adduce quantitative support for the assignment of GePb1 as a Ge DB-type interface center, it is concluded that the GeSi/SiO2 interface uniformity is of good level.

引用

页数：4

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