Room-Temperature Electro-Luminescence of Type-II GaSb/GaAs Quantum Rings

被引：18

作者：

Lin, Wei-Hsun ^{[1
]}

Lin, Meng-Yu ^{[2
]}

Wu, Shung-Yi ^{[1
]}

Lin, Shih-Yen ^{[3
,4
,5
]}

机构：

[1] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 300, Taiwan

[2] Natl Taiwan Univ, Inst Elect, Taipei 10617, Taiwan

[3] Acad Sinica, Res Ctr Appl Sci, Taipei 11529, Taiwan

[4] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan

[5] Natl Taiwan Ocean Univ, Inst Optoelect Sci, Keelung 20224, Taiwan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2012年 / 24卷 / 14期

关键词：

GaSb quantum rings (QR); light-emitting diodes (LEDs);

D O I：

10.1109/LPT.2012.2200247

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The influence of Sb/background As flux ratios on GaSb nano-structures is investigated in this letter. With decreasing Sb/background As flux ratios under high Sb irradiation during the post soaking procedure, ring formation, photoluminescence (PL) intensity enhancement, and PL peak red shift are observed. With further reduced Sb flux and Sb/background As ratios, the observed more intense PL intensities of the quantum-ring (QR) samples compared with quantum dots suggest that more electron-hole wave function overlapping is obtained. The observation of room-temperature electro-luminescence of a QR PIN diode has revealed the potential of the nano-structure in light-emitting device application.

引用

页码：1203 / 1205

页数：3

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