NiPt silicide agglomeration accompanied by stress relaxation in NiSi(010) ∥ Si(001) grains

被引：13

作者：

Mizuo, Mariko ^{[1
]}

Yamaguchi, Tadashi ^{[2
]}

Pagses, Xavier ^{[3
]}

Vanormelingen, Koen ^{[3
]}

Smits, Martin ^{[3
]}

Granneman, Ernst ^{[3
]}

Fujisawa, Masahiko ^{[2
]}

Hattori, Nobuyoshi ^{[1
]}

机构：

[1] Renesas Semicond Mfg Co Ltd, Itami, Hyogo 6640005, Japan

[2] Renesas Elect Corp, Hitachinaka, Ibaraki 3128504, Japan

[3] Levitech BV, NL-1322 AP Almere, Netherlands

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2015年 / 54卷 / 04期

关键词：

THERMAL-STABILITY; NISI FILMS; TECHNOLOGY; EXPANSION; TEXTURE;

D O I：

10.7567/JJAP.54.04DA09

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Pt-doped Ni (NiPt) silicide agglomeration in terms of NiSi crystal orientation, Pt segregation at the NiSi/ Si interface, and residual stress is studied for the first time. In the annealing of Ni monosilicide (NiSi), the growth of NiSi grains whose NiSi b-axes are aligned normal to Si(001) [NiSi(010)parallel to Si(001)] with increasing Pt segregation at the NiSi/Si interface owing to a high annealing temperature was observed. The residual stress in NiSi(010)parallel to Si(001) grains also increases with increasing annealing temperature. Furthermore, the recrystallization of NiSi(010)parallel to Si(001) grains with increasing residual stress continues through additional annealing after NiSi formation. After the annealing of NiSi(010)parallel to Si(001) grains with their strain at approximately 2%, the start of NiPt silicide agglomerates accompanied by stress relaxation was observed. This preferential recrystallization of NiSi(010)parallel to Si(001) grains with increasing residual stress is considered to enhance the NiPt silicide agglomeration. (C) 2015 The Japan Society of Applied Physics

引用

页数：7

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