Magnetic semiconductor and metal-semiconductor junction by Fen nanoparticles encapsulated in beryllium oxygen nanotube

被引：10

作者：

Moradian, Rostam ^{[1
,2
,3
]}

Shahrokhi, Masoud ^{[1
,2
]}

Pourian, Aazam Karami ^{[1
,2
]}

机构：

[1] Razi Univ, Dept Phys, Fac Sci, Kermanshah, Iran

[2] Razi Univ, Nano Sci & Technol Res Ctr, Kermanshah, Iran

[3] Inst Studies Theoret Phys & Math IPM, Dept Nanosci, Computat Phys Sci Res Lab, Tehran, Iran

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2013年 / 344卷

关键词：

BeO nanotube; First-principle; Transition metal; Electronic structure; Magnetic property; BORON-NITRIDE NANOTUBES; CARBON NANOTUBES; STABILITY; CO;

D O I：

10.1016/j.jmmm.2013.04.084

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

By using first-principles calculations within the density function theory, the structural, electronic and magnetic properties of BeO nanotube filled with Fe-n nanoparticles are investigated. We found that all these Fe-n nanoparticle@BeONTs systems are ferromagnetic (FM) and a spin splitting between spin up and down electrons is observed. In terms of nanoparticle diameter, the Fe-n nanoparticle@BeONT system could be a semiconductor, half-metal or metal. Also the BeONT locally become non-magnetic semiconductor/magnetic semiconductor junctions or non-magnetic semiconductor/magnetic metal junctions in terms of nanoparticle diameter. The high magnetic moment and spin polarization of the Fe-n@BeONTs systems imply that it can be used as heterojunctions in electronic devices, magnetic recording, spintronics and are vital for the fabrication of robust nanotube-metal composite materials. (C) 2013 Elsevier By. All rights reserved.

引用

页码：162 / 166

页数：5

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