1.3-μm dual- wavelength DFB laser chip with modulation bandwidth enhancement by integrated passive optical feedback

被引：2

作者：

Guo, Fei ^{[1
]}

Lu, Dan ^{[1
]}

Guo, Lu ^{[1
]}

Liu, Songtao ^{[1
]}

Zhao, Wu ^{[1
]}

Wang, Hao ^{[1
]}

Zhang, Ruikang ^{[1
]}

Kan, Qiang ^{[1
]}

Ji, Chen ^{[1
]}

机构：

[1] Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing Key Lab Low Dimens Semicond Mat & Devices, POB 912, Beijing 100083, Peoples R China

来源：

OPTICS EXPRESS | 2016年 / 24卷 / 25期

基金：

中国国家自然科学基金;

关键词：

ARRAY; FABRICATION; SPEED;

D O I：

10.1364/OE.24.028869

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report a 1.3-mu m dual-wavelength distributed feedback (DFB) photonic integrated chip with modulation bandwidth enhancement using integrated optical feedback section. The dual-wavelength DFB lasers were realized using the upper separate confinement heterostructure (SCH) selective area growth (SAG) approach. A modified butt-joint technique was also adopted to achieve high-quality active-passive interface and minimize unintentional intra-cavity optical feedbacks. The fabricated photonic chip exhibited stable single mode operations with a wavelength separation of 2.06 nm. The 3-dB modulation bandwidth was enhanced through the photon-photon resonance effect with f(3dB) > 17 GHz and open eyes up to 25 Gbit/s for both channels were also obtained. The design can also be scaled up to higher channel counts and higher data rate. (C) 2016 Optical Society of America

引用

页码：28870 / 28877

页数：8