RF-MEMS Tuned GaN HEMT based Cavity Oscillator for X-band

被引：9

作者：

Horberg, Mikael ^{[1
,2
]}

Emanuelsson, Thomas ^{[1
,2
]}

Ligander, Per ^{[1
,2
]}

Lai, Szhau ^{[1
]}

Zirath, Herbert ^{[1
,2
]}

Kuylenstierna, Dan ^{[1
]}

机构：

[1] Chalmers Univ Technol, Dept Microtechnol & Nanosci, Microwave Elect Lab, Gothenburg, Sweden

[2] Ericsson AB, Lindholmspiren 11, SE-41756 Gothenburg, Sweden

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2017年 / 27卷 / 01期

关键词：

Cavity; GaN HEMT; oscillator; phase noise; radio frequency microelectromechanical systems (RF-MEMS);

D O I：

10.1109/LMWC.2016.2629973

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter presents a radio frequency micro-electromechanical systems (RF-MEMS) tuned cavity oscillator for X-band. The active part of the oscillator is implemented in GaN-HEMT MMIC technology. The RF-MEMS-switches are realized on a quartz substrate that is surface mounted on a low loss PCB. The PCB is intruded in an aluminum cavity acting as an electrically moveable wall. For a three-row RF-MEMS setup, a tuning range of 5 % around an oscillation frequency of 10 GHz is demonstrated in measurements. The phase noise is as low as -140 dBc/Hz to -129 dBc/Hz at 100 kHz from the carrier, depending on the configuration of the RF-MEMS.

引用

页码：46 / 48

页数：3

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