A new method for inner surface modification by plasma source ion implantation (PSII)

被引：30
作者：
Liu, B
Liu, CZ
Cheng, DJ
Zhang, GL
He, R
Yang, SZ
机构：
[1] Chinese Acad Sci, Inst Phys, Grp C102, Beijing 100080, Peoples R China
[2] Xiamen Univ, State Key Lab Phys Chem Solid Surfaces, Xiamen 361005, Peoples R China
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2001年 / 184卷 / 04期
关键词：
D O I：
10.1016/S0168-583X(01)00823-0
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
A new method for inner surface modification. named grid-enhanced inner surface modification by plasma source ion implantation (PSII), was proposed and demonstrated in this paper. By introducing an RF plasma core, which is produced between a central cathode and a coaxial grid electrode, and sputtering the cathode, uniform ion implantation and film deposition on the inner surface of a tubular sample can be realized based upon the PSII technique. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：644 / 648
页数：5
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