Effect of Water Vapor, Temperature, and Rapid Annealing on Formamidinium Lead Triiodide Perovskite Crystallization

被引：31

作者：

Aguiar, Jeffery A. ^{[1
]}

Wozny, Sarah ^{[2
]}

Alkurd, Nooraldeen R. ^{[2
]}

Yang, Mengjin ^{[1
]}

Kovarik, Libor ^{[3
]}

Holesinger, Terry G. ^{[4
]}

Al-Jassim, Mowafak ^{[1
]}

Zhu, Kai ^{[1
]}

Zhou, Weilie ^{[2
]}

Berry, Joseph J. ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

[2] Univ New Orleans, Adv Mat Res Inst, New Orleans, LA 70148 USA

[3] Pacific Northwest Natl Lab, Environm Mol Sci Lab, POB 999, Richland, WA 99352 USA

[4] Los Alamos Natl Lab, POB 1663, Los Alamos, NM USA

来源：

ACS ENERGY LETTERS | 2016年 / 1卷 / 01期

关键词：

SOLAR-CELL; SEQUENTIAL DEPOSITION; CH3NH3PBI3; PEROVSKITE; STATE; PERFORMANCE; FILMS; EFFICIENCY; CH(3)NH(3)PBL(3); TRANSFORMATION; STABILIZATION;

D O I：

10.1021/acsenergylett.6b00042

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Perovskite-based solar cells are one of the emerging candidates for radically lower cost photovoltaics. Herein, we report on the synthesis and crystallization of organic-inorganic formamidinium lead triiodide perovskite films under controlled atmospheric and environmental conditions. Using in situ (scanning) transmission electron microscopy, we make observations of the crystallization process of these materials in nitrogen and oxygen gas with and without the presence of water vapor. Complementary planar samples were also fabricated in the presence of water vapor and characterized by in situ X-ray diffraction. Direct observations of the material structure and final morphology indicate that the exposure to water vapor results in a porous film that is metastable, regardless of the presence of argon, nitrogen, or oxygen. However, the optimal crystallization temperature of 175 degrees C is unperturbed across conditions. Rapid modulation about the annealing temperature of 175 degrees C in +/- 25 degrees C steps (150-200 degrees C) promotes crystallization and significantly improves the film morphology by overcoming the presence of impregnated water trapped in the material. Following this processing protocol, we demonstrate substantial growth to micron-size grains via observation inside of an environmentally controlled transmission electron microscope. Adapting this insight from our in situ microscopy, we are able to provide an informed materials protocol to control the structure and morphology of these organic-inorganic semiconductors, which is readily applicable to benchtop device growth strategies.

引用

页码：155 / 161

页数：7

共 41 条

[1] Contrasting the Material Chemistry of Cu2ZnSnSe4 and Cu2ZnSnS(4-x)Sex [J].