Ultrafast, Polarized, Single-Photon Emission from m-Plane InGaN Quantum Dots on GaN Nanowires

被引：29

作者：

Puchtler, Tim J. ^{[1
]}

Wang, Tong ^{[1
]}

Ren, Christopher X. ^{[2
]}

Tang, Fengzai ^{[2
]}

Oliver, Rachel A. ^{[2
]}

Taylor, Robert A. ^{[1
]}

Zhu, Tongtong ^{[2
]}

机构：

[1] Univ Oxford, Dept Phys, Parks Rd, Oxford OX1 3PU, England

[2] Univ Cambridge, Dept Mat Sci & Met, 27 Charles Babbage Rd, Cambridge CB3 0FS, England

来源：

NANO LETTERS | 2016年 / 16卷 / 12期

基金：

欧洲研究理事会; 英国工程与自然科学研究理事会;

关键词：

m-Plane; InGaN; quantum dot; single photon; polarized; OPTICAL-PROPERTIES; ENERGY-GAP; WELLS; PHOTOLUMINESCENCE; DYNAMICS;

D O I：

10.1021/acs.nanolett.6b03980

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We demonstrate single-photon emission from self-assembled m-plane InGaN quantum dots (QDs) embedded on the side-walls of GaN nanowires. A combination of electron microscopy, cathodoluminescence, time-resolved microphotoluminescence (mu PL), and photon autocorrelation experiments give a thorough evaluation of the QD structural and optical properties. The QD exhibits antibunched emission up to 100 K, with a measured autocorrelation function of g((2))(0) = 0.28(0.03) at 5 K. Studies on a statistically significant number of QDs show that these m-plane QDs exhibit very fast radiative lifetimes (260 +/- 55 ps) suggesting smaller internal fields than any of the previously reported c-plane and a-plane QDs. Moreover, the observed single photons are almost completely linearly polarized aligned perpendicular to the crystallographic c-axis with a degree of linear polarization of 0.84 +/- 0.12. Such InGaN QDs incorporated in a nanowire system meet many of the requirements for implementation into quantum information systems and could potentially open the door to wholly new device concepts.

引用

页码：7779 / 7785

页数：7

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