Picosecond pulsed X-ray diffraction from a pulsed laser heated Si(111)

被引：8

作者：

Hironaka, Y

Tange, T

Inoue, T

Fujimoto, Y

Nakamura, KG

Kondo, K

Yoshida, M

机构：

[1] Tokyo Inst Technol, Mat & Struct Lab, Yokohama, Kanagawa 2268503, Japan

[2] Natl Inst Mat & Chem Res, Tsukuba, Ibaraki 3058565, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 08期

关键词：

picosecond X-rays; femtosecond laser; X-ray diffraction; pump-probe measurements; lattice expansion;

D O I：

10.1143/JJAP.38.4950

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Transient lattice expansion of a Si(111) crystal induced by pulsed laser heating is studied by the picosecond pulsed X-ray diffraction. The X-lays used are laser induced X-rays with a pulse duration of 6 ps. The lattice expansion at 3 ns after laser heating is estimated to be about 1 x 10(-3) Angstrom from the observed shift of Bragg angles, which is in good agreement with the numerical calculations of the temperature distribution and the heat transport analysis.

引用

页码：4950 / 4951

页数：2

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