Preparation of Bi4Ti3O12 thin films by MOCVD method and electrical properties of metal/ferroelectric/insulator/semiconductor structure

被引：33

作者：

Kijima, T ^{[1
]}

Matsunaga, H ^{[1
]}

机构：

[1] SHARP Corp, Funct Devices Labs, Chiba 277, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 4B期

关键词：

MF(I)S-FET; ferroelectric thin film; Bi4Ti3O12; bismuth silicate; Bi2SiO5; MOCVD;

D O I：

10.1143/JJAP.38.2281

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Pt/Bi4Ti3O12(001)/Bi2SiO5(100)/Si(100) structures have been fabricated by the metalorganic chemical vapor deposition (MOCVD) at 500 degrees. Bi2SiO5 film is used as a buffer layer to grow ferroelectric Bi4Ti3O12 films because of its relatively high dielectric constant (epsilon = 30). The memory window has a C-V characteristic of about 0.8 V, and the retention time estimated by the zero-bias capacitance for the Pt/100-nm-Bi4Ti3O12/30-nm-Bi2SiO5/Si/Al structure is more than 11 days.

引用

页码：2281 / 2284

页数：4

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