Estimation of residual carrier density near the Dirac point in graphene through quantum capacitance measurement

被引：37

作者：

Nagashio, K. ^{[1
]}

Nishimura, T. ^{[1
]}

Toriumi, A. ^{[1
]}

机构：

[1] Univ Tokyo, Dept Mat Engn, Tokyo 1138656, Japan

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 17期

关键词：

PERFORMANCE;

D O I：

10.1063/1.4804430

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We discuss the residual carrier density (n*) near the Dirac point (DP) in graphene estimated by quantum capacitance (C-Q) and conductivity (sigma) measurements. The C-Q at the DP has a finite value and is independent of the temperature. A similar behavior is also observed for the conductivity at the DP, because their origin is residual carriers induced externally by charged impurities. The n* extracted from C-Q, however, is often smaller than that from sigma, suggesting that the mobility in the puddle region is lower than that in the linear region. The C-Q measurement should be employed for estimating n* quantitatively. (C) 2013 AIP Publishing LLC.

引用

收藏

页数：4

相关论文

共 27 条

[1] A self-consistent theory for graphene transport [J].

Adam, Shaffique ;

Hwang, E. H. ;

Galitski, V. M. ;

Das Sarma, S. .

PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2007, 104 (47) :18392-18397

[2] Screening effect and impurity scattering in monolayer graphene [J].

Ando, Tsuneya .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 2006, 75 (07)

[3] Temperature-dependent transport in suspended graphene [J].

Bolotin, K. I. ;

Sikes, K. J. ;

Hone, J. ;

Stormer, H. L. ;

Kim, P. .

PHYSICAL REVIEW LETTERS, 2008, 101 (09)

[4] Intrinsic and extrinsic performance limits of graphene devices on SiO2 [J].

Chen, Jian-Hao ;

Jang, Chaun ;

Xiao, Shudong ;

Ishigami, Masa ;

Fuhrer, Michael S. .

NATURE NANOTECHNOLOGY, 2008, 3 (04) :206-209

[5]

Chen Z, 2008, INT EL DEVICES MEET, P509

[6] Boron nitride substrates for high-quality graphene electronics [J].

Dean, C. R. ;

Young, A. F. ;

Meric, I. ;

Lee, C. ;

Wang, L. ;

Sorgenfrei, S. ;

Watanabe, K. ;

Taniguchi, T. ;

Kim, P. ;

Shepard, K. L. ;

Hone, J. .

NATURE NANOTECHNOLOGY, 2010, 5 (10) :722-726

[7] Dielectric thickness dependence of carrier mobility in graphene with HfO2 top dielectric [J].

Fallahazad, Babak ;

Kim, Seyoung ;

Colombo, Luigi ;

Tutuc, Emanuel .

APPLIED PHYSICS LETTERS, 2010, 97 (12)

[8] Carrier statistics and quantum capacitance of graphene sheets and ribbons [J].

Fang, Tian ;

Konar, Aniruddha ;

Xing, Huili ;

Jena, Debdeep .

APPLIED PHYSICS LETTERS, 2007, 91 (09)

[9] Tuning the effective fine structure constant in graphene: Opposing effects of dielectric screening on short- and long-range potential scattering [J].

Jang, C. ;

Adam, S. ;

Chen, J. -H. ;

Williams, D. ;

Das Sarma, S. ;

Fuhrer, M. S. .

PHYSICAL REVIEW LETTERS, 2008, 101 (14)

[10] The role of charge traps in inducing hysteresis: Capacitance-voltage measurements on top gated bilayer graphene [J].

Kalon, Gopinadhan ;

Shin, Young Jun ;

Truong, Viet Giang ;

Kalitsov, Alan ;

Yang, Hyunsoo .

APPLIED PHYSICS LETTERS, 2011, 99 (08)