Direct processing of PbZr0.53Ti0.47O3 films on glass and polymeric substrates

被引:7
作者
Yao, Yulian [1 ]
Naden, Aaron B. [2 ,3 ]
Zhang, Fengyuan [4 ,5 ]
Edwards, David [4 ,5 ]
Joshi, Pooran [6 ]
Rodriguez, Brian J. [4 ,5 ]
Kumar, Amit [3 ]
Bassiri-Gharb, Nazanin [1 ,7 ]
机构
[1] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
[2] Univ St Andrews, Sch Chem, St Andrews, Fife, Scotland
[3] Queens Univ Belfast, Ctr Nanostruct Media, Sch Math & Phys, Belfast, Antrim, North Ireland
[4] Univ Coll Dublin, Sch Phys, Dublin 4, Ireland
[5] Univ Coll Dublin, Conway Inst Biomol & Biomed Res, Dublin 4, Ireland
[6] Oak Ridge Natl Lab, Elect & Elect Syst Res Div, Oak Ridge, TN USA
[7] Georgia Inst Technol, GW Woodruff Sch Mech Engn, Atlanta, GA 30332 USA
基金
美国国家科学基金会; 爱尔兰科学基金会;
关键词
Direct low-temperature processing; PZT Thin films; Perovskite; Glass substrates; Polymeric substrates; LEAD-ZIRCONATE-TITANATE; PZT; DEPENDENCE; EVOLUTION;
D O I
10.1016/j.jeurceramsoc.2020.07.052
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
This work reports on direct crystallization of PbZr0.53Ti0.47O3 (PZT) thin films on glass and polymeric substrates, using pulsed thermal processing (PTP). Specifically, xenon flash lamps deliver pulses of high intensity, short duration, broadband light to the surface of a chemical solution deposited thin film, resulting in the crystallization of the film. Structural analysis by X-ray diffraction (XRD) and transmission electron microscopy show the existence of perovskite structure in nano-sized grains (<= 5 nm). Local functional analysis by band excitation piezoelectric spectroscopy and electrostatic force microscopy confirm the presence of a ferroelectric phase and retention of voltage-written polarization for multiple days. Based on structural and functional analyses, strategies are discussed for optimization of pulse voltage and duration for the realization of crystalline ferroelectric thin films. For similar to 200 nm-thick PZT films on glass substrates, 500 mu s-long pulses were required for crystallization, starting with 100 pulses at 350 V, 10 or 25 pulses at 400 V and in general lower number of pulses at higher voltages (resulting in higher radiant energy). Overall power densities of > 6.4 kW/cm(2) were needed for appearance of peaks corresponding to the perovskite phase in the XRD. Films on glass processed at 350-400 V had a higher degree of 111-oriented perovskite grains. Higher applied radiant energy (through increased pulse voltage or count) resulted in more random and/or partially 001-oriented films. For similar to 1 mu m-thick PZT films on polymeric substrates, 10 to 25 250 mu s-long pulses at voltages ranging between 200 to 250 V, corresponding to power densities of similar to 2.8 kW/cm(2), were optimal for maximized perovskite phase crystallization, while avoiding substrate damage.
引用
收藏
页码:5369 / 5375
页数:7
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