Improved Hole Injection into Perovskite Light-Emitting Diodes Using A Black Phosphorus Interlayer

被引：23

作者：

Ricciardulli, Antonio Gaetano ^{[1
]}

Yang, Sheng ^{[2
,3
]}

Kotadiya, Naresh B. ^{[1
]}

Wetzelaer, Gert-Jan A. H. ^{[1
]}

Feng, Xinliang ^{[2
,3
]}

Blom, Paul W. M. ^{[1
]}

机构：

[1] Max Planck Inst Polymer Res, Ackermannweg 10, D-55128 Mainz, Germany

[2] Tech Univ Dresden, CFAED, D-01062 Dresden, Germany

[3] Tech Univ Dresden, Dept Chem & Food Chem, D-01062 Dresden, Germany

来源：

ADVANCED ELECTRONIC MATERIALS | 2019年 / 5卷 / 02期

关键词：

black phosphorus; exfoliation; hole injection layer; light-emitting diodes; perovskite; TRANSPORT LAYER; QUANTUM DOTS; SOLAR-CELLS; NANOCRYSTALS; EXTRACTION; OXIDE;

D O I：

10.1002/aelm.201800687

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The light-output and efficiency of perovskite based light-emitting diodes (PeLEDs) is limited by hole injection and high leakage current, generated by a high hole injection barrier and poor perovskite morphology, respectively. Here, a feasible strategy is reported to overcome both constraints by introducing 2D black phosphorus (BP) as hole injection layer in the PeLED stack. A continuous film composed of high-quality, ultrathin, and large BP sheets on top of poly(3,4-ethylenedioxythiophene) polystyrene sulfonate simultaneously improves the hole injection and morphology of the green-emitting inorganic CsPbBr3 perovskite. Inclusion of the BP enhances the external quantum efficiency of CsPbBr3 based PeLEDs from 0.7% to 2.8%.

引用

页数：6

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